vishay general semiconductor ss10ph9 & ss10ph10 preliminary document number 89000 24-jul-06 www.vishay.com 1 high current density surface mount high-voltage schottky rectifier features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? guardring for overvoltage protection ? high barrier technology, t j = 175 c maximum ? low leakage current ? meets msl level 1, per j-std-020c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. mechanical data case: to-277a (smpc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked to-277a (smpc) anode 1 anode 2 cathode k k 2 1 major ratings and characteristics i f(av) 10 a v rrm 90 v, 100 v i fsm 200 a e as 20 mj v f at i f = 10 a 0.661 v i r 0.3 a t j max. 175 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss10ph9 ss10ph10 unit device marking code 10h9 10h10 maximum repetitive peak reverse voltage v rrm 90 100 v maximum average forward rectified current (see fig. 1) i f(av) 10 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 200 a non-repetitive avalanche energy at i as = 2 a, l = 10 mh, t j = 25 c e as 20 mj voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j, t stg - 55 to + 175 c
www.vishay.com 2 document number 89000 24-jul-06 vishay general semiconductor ss10ph9 & ss10ph10 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) units mounted on recommended p.c.b. 2 oz. pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage (1) at i f = 5 a at i f = 10 a t j = 25 c v f 0.725 0.800 - 0.85 v at i f = 5 a at i f = 10 a t j = 125 c 0.581 0.661 - 0.70 reverse current (1) at rated v r t j = 25 c t j = 125 c i r 0.3 0.3 10 3.0 a ma typical junction capacitance at 4.0 v, 1 mhz c j 270 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss10ph9 ss10ph10 unit typical thermal resistance r ja (1) r jl 60 3 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode ss10ph10-e3/86a 0.10 86a 1500 7" diameter plastic tape & reel ss10ph10-e3/87a 0.10 87a 6500 13" diameter plastic tape & reel figure 1. maximum forward current derating curve 10 12 8 6 4 2 0 25 50 75 100 125 150 175 a v erage for w ard rectified c u rrent (a) lead temperat u re (c) resisti v e or ind u cti v e load t l meas u red at the cathode b and terminal figure 2. forward power loss characteristics 0 1.5 3.0 4.5 6.0 7.5 9.0 01234567 8 91011 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = tp/t tp t d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0
document number 89000 24-jul-06 www.vishay.com 3 ss10ph9 & ss10ph10 vishay general semiconductor figure 3. typical instantaneous forward characteristics figure 4. typical reverse characteristics 0.01 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 175 c t j = 150 c t j = 125 c t j = 25 c 0.00001 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 8 090100 t j = 175 c t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) figure 5. typical junction capacitance figure 6. typical transient thermal impedance 10 100 1000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p j u nction to am b ient 0.01 0.1 1 10 100 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w )
www.vishay.com 4 document number 89000 24-jul-06 vishay general semiconductor ss10ph9 & ss10ph10 package outline dimensions in inches (millimeters) 0.1 8 7 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.1 8 9 (4. 8 0) 0.26 8 (6. 8 0) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.23 8 (6.05) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.0 8 7 (2.20) 0.075 (1.90) 0.1 8 9 (4. 8 0) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) k 21 0.026 (0.65) nom 0.75 nom 0.0 8 4 (2.13) nom 0.155 (3.94) nom mi n . 0.1 8 6 (4.72) mi n . 0.050 (1.27) mi n . 0.055 (1.40) 0.041 (1.04) mi n . conform to jedec to-277a mountin g pad layout to-277a (smpc)
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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